PE2209A mosfet equivalent, p-channel power mosfet.
* VDS = -20V, ID = -1.2A
RDS(ON) < 195mΩ @ VGS=-4.5V RDS(ON) < 350mΩ @ VGS=-2.5V
Schematic diagram
* High Power and current handing capability
* Lead free .
General Features
* VDS = -20V, ID = -1.2A
RDS(ON) < 195mΩ @ VGS=-4.5V RDS(ON) < 350mΩ @ VGS=-2.5V
Schematic diagr.
The PE2209A uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It can be used in a
wide variety of applications.
General Features
* VDS = -20V, ID = -1.2A
RDS(ON) < 195mΩ @ VGS=-4.5V RDS(ON) < 350mΩ @ VGS=-2.5V
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