CEA3055L Features
* 60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 120mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Dr
CEA3055L, CEA3055L_Chino Datasheet
Datasheet Details
CEA3055L, CEA3055L_Chino
Chino-Excel Technology
60.38 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEA3055L, CEA3055L_Chino.
Please refer to the document for exact specifications by model.
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CEA3055L Distributor
