CXDM6053N mosfet equivalent, surface mount n-channel enhancement-mode silicon mosfet.
* Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
* High current (ID=5.3A)
* Logic level compatibility
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage.
This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.
SOT-89 CASE
APPLICATIONS.
The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage c.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 131.72KB)