CXDM3069N datasheet, mosfet equivalent, Central Semiconductor

CXDM3069N mosfet equivalent, surface mount n-channel enhancement-mode silicon mosfet.

Features and benefits

* Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
* High current (ID=6.9A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage.

Application

This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS.

Description

The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage c.

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