logo

NE23383B Datasheet, California Eastern

NE23383B fet equivalent, super low noise amplifier n-channel hj fet.

NE23383B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 26.10KB)

NE23383B Datasheet

Features and benefits


* SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz
* HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz
* GATE LENGTH = LG = 0.3 µm
* GATE WIDTH = W.

Application

NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1.0 ± 0.1 1.45 M.

Description

The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also.

Image gallery

NE23383B Page 1 NE23383B Page 2 NE23383B Page 3

TAGS

NE23383B
SUPER
LOW
NOISE
AMPLIFIER
N-CHANNEL
FET
California Eastern

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts