| Description | The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain. The device is housed in a rugged hermetically sealed metal ceramic stripline package selected f... |
| Features |
• SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz • HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz • GATE LENGTH = LG = 0.3 µm • GATE WIDTH = WG = 280 µm • HERMETIC SEALED CERAMIC PACKAGE • HIGH RELIABILITY 1.88 ± 0.3 2 4 0.5 ± 0.1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 83B 1.88 ± 0.3 1 4.0 MIN (ALL LEADS) 3 DESCRIPTION The ... |
| Datasheet |
 NE23383B Datasheet - 26.10KB |
