NE23300 datasheet, fet equivalent, California Eastern

Features and benefits

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 4.5 .

Application

NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GH.

Description

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain m.

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