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P Channel Enchancement Mode MOSFET
2305
-3.5A
DESCRIPTION
The 2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
3
S05YA
1
2
S: Subcontractor Y: Year Code A: Process Code
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD.
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P Channel Enchancement Mode MOSFET
2305
-3.
2305 Datasheet
