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CYStech Electronics

MTN2N65BJ3 Datasheet Preview

MTN2N65BJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2N65BJ3
BVDSS
ID @VGS=10V, TC=25°C
Features
Low On Resistance
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=1A
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
650V
2A
1.3A
3.9Ω(typ)
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN2N65BJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTN2N65BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2N65BJ3
CYStek Product Specification




CYStech Electronics

MTN2N65BJ3 Datasheet Preview

MTN2N65BJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25)
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
EAS
IAS
EAR
dv/dt
TL
PD
Tj, Tstg
Limits
650
±30
2.0
1.3
8.0
10
2
4.4
4.5
300
1.14
44
0.35
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W
W/°C
°C
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=2A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25.
3. ISD1.8A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.8
110
Unit
°C/W
°C/W
MTN2N65BJ3
CYStek Product Specification


Part Number MTN2N65BJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
Total Page 9 Pages
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