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MTN2N60DJ3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTN2N60DJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTN2N60DJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing.

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Datasheet Details

Part number MTN2N60DJ3
Manufacturer CYStech
File Size 514.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN2N60DJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C083J3 Issued Date : 2016.02.16 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN2N60DJ3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=1A 600V 2A 3.
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