MTBC7N10K3 mosfet equivalent, n-channel enhancement mode power mosfet.
* Lower gate charge.
* ESD protected gate.
* Pb-free lead plating and Halogen-free package.
BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@V.
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