MTB1D7N03RH8

The MTB1D7N03RH8 is N-Channel Enhancement Mode Power MOSFET designed by CYStech.

Product Overview

CYStech

Part number	MTB1D7N03RH8
Manufacturer	CYStech
File Size	869.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1D7N03RH8-CYStech.pdf
Additional preview pages of the MTB1D7N03RH8 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 131A(silicon limit) 84A(package limit) 26.2A 1.2mΩ(typ) 1.9mΩ(typ) Symbol MTB1D7N03RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D7N03RH8-0-T6-G Package D.

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Other Datasheets by CYStech

Published: Mar 14, 2020 |