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MTB1D7N03J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTB1D7N03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTB1D7N03J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pack.

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Datasheet Details

Part number MTB1D7N03J3
Manufacturer CYStech
File Size 658.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D7N03J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C948J3 Issued Date : 2015.09.14 Revised Date : 2018.05.17 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB1D7N03J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 60A 20.6A 2.0 mΩ(typ) 2.