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BTC3097T3 - High Voltage NPN Triple Diffused Planar Transistor

Key Features

  • High voltage, BVCBO=1600V min. , BVCEO=800V min.
  • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note :.
  • 1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800.

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Datasheet Details

Part number BTC3097T3
Manufacturer CYStech
File Size 204.13 KB
Description High Voltage NPN Triple Diffused Planar Transistor
Datasheet download datasheet BTC3097T3 Datasheet

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CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800 6 1 3 *1 1 10 -55~+150 Unit V V V A A W °C BTC3097T3 CYStek Product Specification CYStech Electronics Corp. Spec. No.