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BTC3906N3G - General Purpose NPN Epitaxial Planar Transistor

Description

The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage.

Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTA1514N3G.
  • Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Junction.

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Datasheet Details

Part number BTC3906N3G
Manufacturer CYStech
File Size 144.83 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC3906N3G Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3G Spec. No. : C208N3G Issued Date : 2008.12.11 Revised Date : Page No. : 1/5 Description The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage.
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