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BTB9435L3 - PNP Transistor

Key Features

  • Low VCE(sat).
  • Excellent current gain characteristics.
  • RoHS compliant package Symbol BTB9435L3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC(DC) IC(pulse) -40 -30 -6 -3 -5 (Note 1) Power Dissipation Pd(Ta=25℃) 1.56 (Note 2) Thermal Resistance, junction to ambient Thermal Resistance, juncti.

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Datasheet Details

Part number BTB9435L3
Manufacturer CYStech
File Size 221.75 KB
Description PNP Transistor
Datasheet download datasheet BTB9435L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB9435L3 Spec. No. : C809L3 Issued Date : 2009.01.16 Revised Date: Page:1/7 Features • Low VCE(sat) • Excellent current gain characteristics • RoHS compliant package Symbol BTB9435L3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC(DC) IC(pulse) -40 -30 -6 -3 -5 (Note 1) Power Dissipation Pd(Ta=25℃) 1.56 (Note 2) Thermal Resistance, junction to ambient Thermal Resistance, junction to case Junction Temperature Pd(Tc=25℃) RθJA RθJC Tj 3 80 42 150 Storage Temperature Tstg -55~+150 Note : 1. Single Pulse Pw≦300μs,Duty≦2%. 2.