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BTB9050N3 - PNP Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =-0.13V at Ic/IB =-20mA/-2mA.

Complementary to BTNA45N3 Pb-free package Symbol BTB9050N3 Outline SOT-23 C B：Base C：Collector E：Emitter BE Absolute Maximum Ratings (Ta=25°C) Pa

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Datasheet Details

Part number BTB9050N3
Manufacturer CYStech
File Size 238.25 KB
Description PNP Transistor
Datasheet download datasheet BTB9050N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTB9050N3 Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 1/7 Description • High breakdown voltage. (BVCEO=-500V) • Low saturation voltage, typical VCE(sat) =-0.13V at Ic/IB =-20mA/-2mA. • Complementary to BTNA45N3 • Pb-free package Symbol BTB9050N3 Outline SOT-23 C B：Base C：Collector E：Emitter BE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction-to-Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Rth,ja Tj Tstg Note : Device mounted on a FR-4 board with minimum pad size.
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