Datasheet4U Logo Datasheet4U.com

BTB5839M3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating and halogen-free package Symbol BTB5839M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Ordering Information Device Package Shipping BTB5839M3-0-T2-G SOT-89 1000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing sp.

📥 Download Datasheet

Datasheet Details

Part number BTB5839M3
Manufacturer CYStech
File Size 353.59 KB
Description PNP Transistor
Datasheet download datasheet BTB5839M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Spec. No. : C240M3 Issued Date : 2012.10.18 Revised Date : 2014.08.06 Page No. : 1/8 Features  Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.