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BTB5213L3 - PNP Transistor

Description

General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage.

Features

  • High collector current and low VCE(SAT).
  • Complement to BTD5213L3.
  • Pb-free lead plating package. Symbol BTB5213L3 Outline SOT-223 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg BTB5213L3 BCE Limits -100 -80 -5 -.

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Datasheet Details

Part number BTB5213L3
Manufacturer CYStech
File Size 222.59 KB
Description PNP Transistor
Datasheet download datasheet BTB5213L3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTB5213L3 Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 1/7 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features • High collector current and low VCE(SAT). • Complement to BTD5213L3. • Pb-free lead plating package. Symbol BTB5213L3 Outline SOT-223 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg BTB5213L3 BCE Limits -100 -80 -5 -1 -1.
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