CTH2506NS-T52 datasheet, mosfet equivalent, CT Micro

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Features and benefits

* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A
* Continuous Dra.

Application

* DC/DC Converter
* Power Management
* Load Switch Package Outline Schematic Drain Gate Source Drain G.

Description

The CTH2506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

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