CTH2503NS-T52 datasheet, mosfet equivalent, CT Micro

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 1.02MB)

Features and benefits

* Drain-Source Breakdown Voltage VDSS 30V
* Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A
* Continuous Drai.

Application

* Power Management
* Portable Equipment
* DC/DC Converter
* Load Switch Package Outline Schematic Dra.

Description

The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

Image gallery