CTH2503NS-T52 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTH2503NS-T52
Manufacturer	CT Micro
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	CTH2503NS-T52 Datasheet
Additional preview pages of the CTH2503NS-T52 datasheet.

Product details

Description

The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management Portable Equipment DC/DC Converter Load Switch Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confid

Features

Drain-Source Breakdown Voltage VDSS 30V.
Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A.
Continuous Drain Current at TC=25℃, ID =25A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |