Full PDF Text Transcription for CMPA5259050F (Reference)
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CMPA5259050F. For precise diagrams, and layout, please refer to the original PDF.
CMPA5259050F 50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) desi...
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a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package. PacPkNa:geCMTyPpAe5:245490025109F Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.5 GHz 5.9 GHz Small Signal Gain 31.4 30.8 31.0 Output Power 59.6 56.0 55.2 Efficiency 51.5 50.1 51.4 Input Return Loss -12.5 -12.0 -7.0 Note: 100 μsec Pulse Width, 10% Duty Cycle, PIN= 26 dB
CMPA5259050F Datasheet
