CMPA1D1E025F amplifier equivalent, power amplifier.
* 24 dB Small Signal Gain
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40 W Typical Pulsed PSAT Operation up to 40 V
* 20 W linear power under OQPSK
* Class A/B high gain, high efficienc.
It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed .
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku Band 25W MMIC i.
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