Package
* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* H.

TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) .

C3M0075120D

C3M0075120D-A

C3M0075120K

C3M0075120K-A

C3M0015065D

C3M0015065K

C3M0016120D

C3M0016120K

C3M0021120D

C3M0021120K

C3M0025065D

C3M0025065J1

C3M0025065K

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