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VDS 1200 V
C3M0075120D
ID @ 25˚C
30 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 75 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency
Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies
Part Number C3M0075120D
Package TO-247-3
Marking C3M0075120
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
C3M0075120D Datasheet
