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BFW10 - N-CHANNEL SILICON FETS

General Description

Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case.

They are designed for broad band amplifiers (0 to 300 MHz).

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Datasheet Details

Part number BFW10
Manufacturer COMSET
File Size 58.38 KB
Description N-CHANNEL SILICON FETS
Datasheet download datasheet BFW10 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers.