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BFW11 - N-CHANNEL SILICON FETS

Download the BFW11 datasheet PDF. This datasheet also covers the BFW10 variant, as both devices belong to the same n-channel silicon fets family and are provided as variant models within a single manufacturer datasheet.

Description

Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case.

They are designed for broad band amplifiers (0 to 300 MHz).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFW10-COMSET.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BFW11
Manufacturer COMSET
File Size 58.38 KB
Description N-CHANNEL SILICON FETS
Datasheet download datasheet BFW11 Datasheet

Full PDF Text Transcription

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BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers.
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