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CHENG-YI

BAV99W-WS Datasheet Preview

BAV99W-WS Datasheet

DUAL SERIES SWITCHING DIODE

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BAV99W-WS
PB FREE PRODUCT
DUAL SERIES SWITCHING DIODE
Features
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
The BAV99W is a smaller package, equivalent to the BAV99
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
.
DEVICE MARKING
BAV99W
A7 / KJG
MAXIMUM RATINGS (Each Diode)
Rating
Reverse Voltag
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1.)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 µs
t = 1.0 ms
t = 1.0 S
1. FR–5 = 1.0 × 0.75 × 0.062 in.
Symbol
VR
IF
IFM(surge)
VRRM
IF(AV)
IFRM
IFSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
SOT-323 (SC-70)
ANODE
1
CATHODE
2
3
CATHODE/ANODE




CHENG-YI

BAV99W-WS Datasheet Preview

BAV99W-WS Datasheet

DUAL SERIES SWITCHING DIODE

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BAV99W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
FR–5 Board, (Note 1.) TA = 25°C
Derate above 25°C
PD 200
1.6
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2.) TA = 25°C
Derate above 25°C
RθJA
PD
625
300
2.4
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
TJ,Tstg
417
–65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(I(BR) = 100 µA)
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
V(BR)
IR
CD
VF
70
––
––
––
––
––
––
––
––
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
––
2.5
30
50
1.5
715
855
1000
1250
Reverse Recovery Time
RL = 100
(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)
Forward Recovery Voltage (IF = 10 mA, t r = 20 ns)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
trr –– 6.0
VFR –– 1.75
Unit
Vdc
µAdc
pF
mVdc
ns
V
+10 V 820 2.0 k
100 µH
IF
0.1µF
tr tp
10%
t
0.1 µF
50 OUTPUT
PULSE
GENERATOR
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
V R INPUT SIGNAL
IF
IR
t rr t
i R(REC) = 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit


Part Number BAV99W-WS
Description DUAL SERIES SWITCHING DIODE
Maker CHENG-YI
Total Page 4 Pages
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