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Toshiba Electronic Components Datasheet

BAV99W Datasheet

Switching Diodes

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Switching Diodes Silicon Epitaxial Planar
BAV99W
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
BAV99W
1: Anode 1
2: Cathode 2
3: Cathode 1/Anode 2
USM
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
100 V
Reverse voltage
VR
100
Peak forward current
IFM (Note 1)
500 mA
Average rectified current
IO (Note 2)
150
Non-repetitive peak forward surge current
IFSM (Note 2), (Note 3)
2
A
Power dissipation
PD
100 mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 40%
Note 2: Unit rating. Total rating = Unit rating × 70%
Note 3: Measured with a 10 ms pulse.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-08
2017-12-21
Rev.2.0


Toshiba Electronic Components Datasheet

BAV99W Datasheet

Switching Diodes

No Preview Available !

4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
VF (4)
IR (1)
IR (2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA, See Fig. 4.1.
Min
Typ.
0.9
BAV99W
Max
0.715
0.855
1.00
1.25
30
200
4.0
Unit
V
nA
pF
ns
5. Marking
Fig. 4.1 Reverse recovery time (trr) Test circuit
©2016-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-21
Rev.2.0


Part Number BAV99W
Description Switching Diodes
Maker Toshiba
Total Page 6 Pages
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