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CED65P03/CEU65P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -65A, RDS(ON) = 9mΩ @VGS = -10V. RDS(ON) = 12mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
-30
±20
-65 -260 62.5 0.
CEU65P03 Datasheet
