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CEU655 - N-Channel MOSFET

Datasheet Summary

Features

  • 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU655
Manufacturer CET
File Size 409.40 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU655 Datasheet
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Full PDF Text Transcription

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CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 150 ±20 6.4 25.6 43 0.
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