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CEM26138
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V.
20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
SO-8
1
D1 D1 D2 D2 876 5
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 7.6 IDM 30
Channel 2 20
±12
6 24
Maximum Power Dissipation
PD 2.
CEM26138 Datasheet
