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CEP85N75V/CEB85N75V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 75
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
85 59 340
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
200 1.
CEB85N75V Datasheet
