CEB20A03 transistor equivalent, n-channel enhancement mode field effect transistor.
30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead.
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