NESG2021M16 datasheet, transistor equivalent, CEL

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 79.55KB)

NESG2021M16 Datasheet

Features and benefits

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
* LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz
* HIGH MAXIMUM STABLE G.

Application

including low noise ampliﬁers, medium power ampliﬁers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUM.

Description

NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 2.

Image gallery