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NESG2021M05 Datasheet, CEL

NESG2021M05 transistor equivalent, npn sige high frequency transistor.

NESG2021M05 Avg. rating / M : 1.0 rating-11

datasheet Download

NESG2021M05 Datasheet

Features and benefits


*
* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: M.

Application

including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package pro.

Image gallery

NESG2021M05 Page 1 NESG2021M05 Page 2 NESG2021M05 Page 3

TAGS
NESG2021M05
NPN
SiGe
HIGH
FREQUENCY
TRANSISTOR
NESG2021M16
NESG2030M04
NESG2031M05
CEL
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