NE85619-T1-A, NE85619 Datasheet - CEL

NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR

The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pass.

NE85619-T1-A Features

* Low Voltage Use.

* High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

* Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

NE85619-CEL.pdf

NE85619-T1-A Datasheet Preview — This datasheet PDF includes multiple part numbers: NE85619-T1-A, NE85619. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

NE85619-T1-A, NE85619

Manufacturer:

CEL

File Size:

4.33 MB

Description:

Npn silicon epitaxial transistor.

Note:

This datasheet PDF includes multiple part numbers: NE85619-T1-A, NE85619.
Please refer to the document for exact specifications by model.

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NE85619-T1-A NE85619 NPN SILICON EPITAXIAL TRANSISTOR CEL

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