NE68130 - NPN SILICON RF TRANSISTOR

CEL

Description

The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

super minimold package.

Features

Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz.
High gain : S21e2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz.
3-pin super minimold package.

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NE68130 npn silicon rf transistor by CEL - Datasheet Preview

Datasheet Details

Part number	NE68130
Manufacturer	CEL
File Size	1.18 MB
Description	NPN SILICON RF TRANSISTOR
Datasheet	NE68130 Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DISCONTINUED DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : S21e2 = 12 dB TYP.