NE664M04-T2-A transistor equivalent, npn silicon rf transistor.
* Ideal for 460 MHz to 2.4 GHz medium output power amplification
* PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
* High collector efficie.
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