NE662M16 transistor equivalent, npn silicon rf transistor.
* Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 700.05KB)