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NE662M16-A Datasheet, CEL

NE662M16-A transistor equivalent, npn silicon rf transistor.

NE662M16-A Avg. rating / M : 1.0 rating-11

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NE662M16-A Datasheet

Features and benefits


* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. .

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NE662M16-A Page 1 NE662M16-A Page 2 NE662M16-A Page 3

TAGS
NE662M16-A
NPN
SILICON
TRANSISTOR
NE662M16-T3
NE662M16-T3-A
NE662M16
CEL
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