900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CDIL

BC237 Datasheet Preview

BC237 Datasheet

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

No Preview Available !

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC237,238, A,B,C
BC239, B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
Emitter Base Voltage
VCES
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC237
45
50
6.0
BC238
25
30
5.0
100
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
357
125
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC237
Emitter Base Voltage
VEBO
BC238/BC239
IE=10µA, IC=0
BC237
BC238/BC239
Collector Cut Off Current
ICES BC238/BC239
VCE=30V, VBE=0
BC237
VCE=50V, VBE=0
MIN
45
25
6.0
5.0
BC238/BC239
VCE=30V, VBE=0, Ta=125ºC
BC237
VCE=50V, VBE=0, Ta=125ºC
BC237_239Rev_1 201205E
BC239
25
30
5.0
MAX
15
15
4.0
4.0
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
nA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 5




CDIL

BC237 Datasheet Preview

BC237 Datasheet

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

No Preview Available !

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC237,238, A,B,C
BC239, B,C
CB E
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
hFE
TEST CONDITION
IC=10µA, VCE=5V
A
B
C
IC=2mA, VCE=5V
BC237/238/239
A
B
C
*IC=100mA, VCE=5V
A
B
Collector Emitter Saturation Voltage VCE (sat)
C
IC=10mA, IB=0.5mA
Base Emitter Saturation Voltage
Base Emitter On Voltage
VBE (sat)
VBE (on)
*IC=100mA, IB=5mA
BC237/239
BC238
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
IC=2mA, VCE=5V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
fT IC=0.5mA, VCE=3V, f=100MHz
BC237
BC238
BC239
Collector Output Capacitance
Emitter Input Capacitance
Noise Figure
IC=10mA, VCE=5V, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
Cib VEB=0.5V, f=1MHz
NF VCE=5V, IC=0.2mA, RS=2K,
f=1KHz, B=200Hz
BC237/238
BC239
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
BC237_239Rev_1 201205E
MIN MAX
TYP90
TYP150
TYP270
120 800
120 220
200 460
380 800
TYP120
TYP180
TYP300
0.20
0.60
0.80
0.83
1.05
0.55 0.70
MIN MAX
TYP100
TYP120
TYP140
150
4.5
TYP8
10
4.0
UNITS
V
V
V
V
V
V
UNITS
MHz
MHz
MHz
MHz
pF
pF
dB
dB
Continental Device India Limited
Data Sheet
Page 2 of 5



Part Number BC237
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Maker CDIL
Total Page 5 Pages
PDF Download

BC237 Datasheet PDF





Similar Datasheet

1 BC2310IR-960-N Leaded Power Chokes
Chilisin Electronics
2 BC237 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CDIL
3 BC237 Amplifier Transistors
Motorola
4 BC237 Amplifier Transistors
ON
5 BC237 NPN general purpose transistors
Philipss
6 BC237 NPN EPITAXIAL SILICON TRANSISTOR
Fairchild
7 BC237 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
8 BC237 NPN Silicon Epitaxial Planar Transistor
SEMTECH
9 BC237 EPITAXIAL PLANAR NPN TRANSISTOR
KEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy