CSD40N70 mosfet equivalent, n-channel trench power mosfet.
* VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* .
Features
* VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
* High Power and current h.
The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = 40V,ID =60A RDS(ON) < .
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