CSD40N160 mosfet equivalent, n-channel trench power mosfet.
* VDS = 40V,ID =30A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* Sur.
Features
* VDS = 40V,ID =30A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V
* High Power and current hand.
The CSD40N160 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = 40V,ID =30A RDS(ON) <.
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