CS8205G mosfet equivalent, n-channel trench power mosfet.
* VDS = 19.5V,ID =4.1A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 39mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired
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Schematic Diagram
Features
* VDS = 19.5V,ID =4.1A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 39mΩ @ VGS =2.5V
* Hig.
The CS8205G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications.
Schematic Diagram
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