Datasheet4U Logo Datasheet4U.com

MS10N80 - N-Channel MOSFET

General Description

The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Originative New Design.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 46nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) : 1.10 Ω (Typ. ) @VGS=10V.
  • 100% Avalanche Tested.
  • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol.

📥 Download Datasheet

Datasheet Details

Part number MS10N80
Manufacturer Bruckewell
File Size 955.96 KB
Description N-Channel MOSFET
Datasheet download datasheet MS10N80 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MS1000 RF & MICROWAVE TRANSISTORS Advanced Power Technology
MS1000 Single axis analog accelerometer SAFRAN
MS1000L Single axis analog accelerometer SAFRAN
MS1000T Single axis analog accelerometer SAFRAN
MS1001 RF & MICROWAVE TRANSISTORS Advanced Power Technology

Other Datasheets by Bruckewell

Part Number Description
MS10N60 N-Channel MOSFET
MS10N65 N-Channel MOSFET
MS10N65SJ N-Channel MOSFET
MS12N60 N-Channel MOSFET
MS12N65 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 46nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 1.10 Ω (Typ.