MS10N80 datasheet, mosfet equivalent, Bruckewell

Features and benefits

* Originative New Design
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 46nC (Typ.)
* Extended Saf.

Application

Features
* Originative New Design
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics

Description

The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial.

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