RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applic.

Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maxim.

The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.

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