B6010D mosfet equivalent, n-channel mosfet.
RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package
Applic.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC
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The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.
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