B3942 mosfet equivalent, n- and p-channel 30-v (d-s) mosfet.
RDS(ON)=25mΩ@VGS=10V (N-Ch) RDS(ON)=40mΩ@VGS=4.5V (N-Ch) RDS(ON)=35mΩ@VGS=-10V (P-Ch) RDS(ON)=58mΩ@VGS =-4.5V (P-Ch) Super High Density Cell Design for Extremely Low RDS(.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC
℃Absolute Maximu.
The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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