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BF8205T - Dual N-Channel MOSFET

General Description

The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch.

Key Features

  • .
  • VDS (V) =20V.
  • Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A) Absolute Maximum Ratings (Tc = 25℃) Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) a b Value 20 ±12 5 20 2 150 -55~+150 Unit V V A A W ℃ ℃ Total Power Dissipation Channel Temperature Storage Temperature Note a. PW.

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Datasheet Details

Part number BF8205T
Manufacturer BYD Microelectronics
File Size 209.57 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet BF8205T Datasheet

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BF8205T BYD Microelectronics Co., Ltd. Dual N-Channel MOSFET General Description The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch. Features • VDS (V) =20V • Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A) Absolute Maximum Ratings (Tc = 25℃) Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) a b Value 20 ±12 5 20 2 150 -55~+150 Unit V V A A W ℃ ℃ Total Power Dissipation Channel Temperature Storage Temperature Note a. PW<10us, Duty Cycle<1%, VGS=4.5V. b. Mounted on ceramic substrate of 45 cm2x 2.2mm.