BF8205T mosfet equivalent, dual n-channel mosfet.
* VDS (V) =20V
* Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
Absolute Maximum Ratings (Tc .
(personal equipment, office equipment, domestic appliances, etc.). These BME products are neither intended nor warranted.
The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch.
Features
* VDS (V) =20V
* Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS .
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