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BF8205E - Dual N-Channel MOSFET

Description

The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch.

This device has ESD protection.

Features

  • z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free S1 D1/D2 S2 Absolute Maximum Ratings (Tc = 25℃) Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Stora.

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Datasheet Details

Part number BF8205E
Manufacturer BYD
File Size 385.36 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet BF8205E Datasheet

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BYD Microelectronics Co., Ltd. BF8205E Dual N-Channel MOSFET General Description The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch. This device has ESD protection. G1 D1/D2 G2 654 12 3 Features z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD.
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